型号 SI4874BDY-T1-GE3
厂商 Vishay Siliconix
描述 MOSFET N-CH 30V 12A 8-SOIC
SI4874BDY-T1-GE3 PDF
代理商 SI4874BDY-T1-GE3
标准包装 2,500
系列 TrenchFET®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 12A
开态Rds(最大)@ Id, Vgs @ 25° C 7 毫欧 @ 16A,10V
Id 时的 Vgs(th)(最大) 3V @ 250µA
闸电荷(Qg) @ Vgs 25nC @ 4.5V
输入电容 (Ciss) @ Vds 3230pF @ 15V
功率 - 最大 1.6W
安装类型 表面贴装
封装/外壳 8-SOIC(0.154",3.90mm 宽)
供应商设备封装 8-SOICN
包装 带卷 (TR)
同类型PDF
SI4876DY-T1-E3 Vishay Siliconix MOSFET N-CH 20V 14A 8-SOIC
SI4876DY-T1-E3 Vishay Siliconix MOSFET N-CH 20V 14A 8-SOIC
SI4876DY-T1-E3 Vishay Siliconix MOSFET N-CH 20V 14A 8-SOIC
SI4876DY-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 14A 8-SOIC
SI4880DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 13A 8-SOIC
SI4880DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 13A 8-SOIC
SI4884BDY-T1-E3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC
SI4884BDY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC
SI4886DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 9.5A 8-SOIC
SI4886DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 9.5A 8-SOIC
SI4888DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 11A 8-SOIC
SI4888DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 11A 8-SOIC
SI4890BDY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 16A 8-SOIC
SI4890BDY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 16A 8-SOIC
SI4890BDY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 16A 8-SOIC
SI4890BDY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 16A 8-SOIC
SI4890DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 11A 8-SOIC
SI4890DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 11A 8-SOIC
SI4890DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 11A 8-SOIC
SI4890DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 11A 8-SOIC